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31.
利用霍普金森扭杆(Torsional Split-Hopkinson Bar)技术对三种不同成份或状态的铝-锂合金材料的动态应力-应变-应变率关系进行了实验测定。应变率范围由1300s-1到2600s-1,研究表明随着应变率的提高,三种不同成份或状态的铝-锂合金材料的韧性和强度都有不同程度的提高。对剪切带的初步观察发现,随应变率的增加,剪切带有变窄的趋势。  相似文献   
32.
潘客麟  嵇醒 《力学季刊》1997,18(1):44-49
本文通过对粘塑性材料剪切带中含孔洞的代表体元的细观力学分析,得到了剪切带的宏观本构热和本构关系。采用上限方法,给出了多孔粘塑性材料正交流动法则存在的条件。  相似文献   
33.
The paper is concerned with magnetoelastic shear waves propagating in regularly layered magnetostrictive media at a right angle to the layer interfaces __________ Translated from Prikladnaya Mekhanika, Vol. 42, No. 6, pp. 54–60, June 2006.  相似文献   
34.
Ozone adsorption and decomposition on metal oxides is of wide interest in technology and in atmospheric chemistry. Here, ozone‐adsorption‐induced band bending is observed on Ti‐ and Fe‐oxide model surfaces under dry and humid conditions. Photoelectron spectroscopic studies indicate the effect of charge transfer to O3, which limits the surface coverage of the precursor to decomposition reactions. This is also consistent with the negative pressure dependence observed in previous studies. These results contribute to our fundamental understanding of ozone adsorption and decomposition mechanisms on metal oxides of environmental and technological relevance.  相似文献   
35.
The dissolution phenomenon of Mn ions in LiMn2O4 (LMO) cathode material for lithium ion batteries (LIBs) was investigated by a first principle calculation using the discrete variational Xα molecular orbital method. It was found that the oxidation number of Mn ions easily increases at high temperatures due to the empty levels of Mn 3d orbitals located in the vicinity of the Fermi energy level of LMO crystal. The changes of density of states (DOS) and Mn‐O bonding properties with doping were examined. Analysis of DOS showed that the substitution of elements with a smaller oxidation number than Mn was found effective in keeping Mn ions at higher oxidation states. From the calculation of bonding properties, the dissolution of Mn was found to be strongly correlated with the covalent nature of Mn‐O bond. Based on the results, we concluded that increasing the covalent character of Mn‐O bond is effective to minimize the dissolution of Mn ions, along with suppressing the formation of Jahn‐Teller‐active Mn3+ by inducing Mn ions at high oxidation state with proper selection of doping elements. © 2012 Wiley Periodicals, Inc.  相似文献   
36.
Ren-Jie Liu 《中国物理 B》2021,30(8):86104-086104
The defect evolution in InP with the 75 keV H+ and 115 keV He+ implantation at room temperature after subsequent annealing has been investigated in detail. With the same ion implantation fluence, the He+ implantation caused much broader damage distribution accompanied by much higher out-of-plane strain with respect to the H+ implanted InP. After annealing, the H+ implanted InP did not show any blistering or exfoliation on the surface even at the high fluence and the H2 molecules were stored in the heterogeneously oriented platelet defects. However, the He molecules were stored into the large bubbles which relaxed toward the free surface, creating blisters at the high fluence.  相似文献   
37.
New donor–π–acceptor (D–π–A) type conjugated copolymers, poly[(4,8‐bis((2‐hexyldecyl)oxy)benzo[1,2‐b:4,5‐b′]dithiophene)‐alt‐(2,5‐bis(4‐octylthiophen‐2‐yl)thiazolo[5,4‐d]thiazole)] (PBDT‐tTz), and poly[(4,8‐bis((2‐hexyldecyl)oxy)benzo[1,2‐b:4,5‐b′]dithiophene)‐alt‐(2,5‐bis(6‐octylthieno[3,2‐b]thiophen‐2‐yl)thiazolo[5,4‐d]thiazole)] (PBDT‐ttTz) were synthesized and characterized with the aim of investigating their potential applicability to organic photovoltaic active materials. While copolymer PBDT‐tTz showed a zigzagged non‐linear structure by thiophene π‐bridges, PBDT‐ttTz had a linear molecular structure with thieno[3,2‐b]thiophene π‐bridges. The optical, electrochemical, morphological, and photovoltaic properties of PBDT‐tTz and PBDT‐ttTz were systematically investigated. Furthermore, bulk heterojunction photovoltaic devices were fabricated by using the synthesized polymers as p‐type donors and [6,6]‐phenyl‐C71‐butyric acid methyl ester as an n‐type acceptor. PBDT‐ttTz showed a high power conversion efficiency (PCE) of 5.21% as a result of the extended conjugation arising from the thienothiophene π‐bridges and enhanced molecular ordering in the film state, while PBDT‐tTz showed a relatively lower PCE of 2.92% under AM 1.5 G illumination (100 mW/cm2). © 2018 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2018 , 56, 1978–1988  相似文献   
38.
本文基于第一性原理方法研究了Y,Zr,Nb在Sn位掺杂SnO_2的键长变化、稳定性、能带结构以及态密度.结果表明:Y,Zr,Nb在Sn位掺杂SnO_2使附近的键长发生改变,改变量最大是Y掺杂SnO_2体系;掺杂体系的杂质替换能都为负值,表明体系为稳定结构;掺杂使SnO_2能级增多,能较好的调节带隙值;而Y掺杂SnO_2体系价带顶端有一条能级越过了费米线表明该体系呈现出半导体的特征;同时,Y,Zr,Nb掺杂SnO_2使导带底端的能级出现分离;在低能区的态密度仍主要由Sn、O的s轨道贡献;在高能区态密度的掺杂体系出现sp杂化的现象; Zr掺杂SnO_2的态密度能量向低能区移动.  相似文献   
39.
六方氮化硼(h-BN)晶格结构是一种类六方对称复式超晶格结构。具有h-BN晶格构型的光子晶体以其宽光子带隙特点受到国内外学者的广泛关注。本文利用不同尺度低压气体放电管与Al2O3介质棒周期性排列,构建了新型h-BN型超晶格等离子体光子晶体,实现其空间结构和等离子体参数的动态调控。利用微波透射谱对比研究了h-BN型超晶格与简单三角晶格等离子体光子晶体禁带位置、宽度和数目。分析了放电电流、介质棒阵列数对不同频段光子带隙的影响,以及电磁波入射角度对电磁传输特性的影响。结果表明:等离子体的引入不仅能够形成新的光子带隙,而且可以选择性地使部分禁带位置发生移动;相对于简单三角晶格,h-BN型超晶格等离子体光子晶体呈现出更多光子带隙;Al2O3介质棒阵列数对等离子体光子晶体禁带位置、宽度和数目均具有重要影响。电磁波入射角度变化越大,电磁传输特性差别越显著,透射谱相关性越差。本文所设计的新型h-BN型超晶格等离子体光子晶体为制作可调谐光子晶体提供了新的思路,在微波和太赫兹波控制领域具有潜在应用价值。  相似文献   
40.

Isoregic conjugated polymers composed of thiophene and dialkoxybenzene units were designed to harvest incident light in the mid‐visible energy range (band gap of 2.1 eV). Poly(1,4‐bis(2‐thienyl)‐2,5‐diheptoxybenzene) (PBTB(OC7H15)2) and poly(1,4‐bis(2‐thienyl)‐2,5‐didodecyloxybenzene) (PBTB(OC12H25)2) have shown significant photovoltaic performance as an electron donor when used in tandem with the electron acceptor [6, 6]‐phenyl C61‐butyric acid methyl ester (PCBM) in bulk hetero‐junction photovoltaic devices. Photovoltaic devices incorporating PBTB(OC7H15)2 and PCBM have shown AM1.5 efficiencies of ~0.6% with a short circuit current density of 2.5 mA/cm2, an open circuit voltage of 0.74 V, and a fill factor of 0.32. Incident Photon‐to‐Current Efficiency (IPCE) of the device was found to be ca. 16% at 410 nm. In order to examine the relationship between the molecular structure of the polymers and their electronic energy levels, and to correlate this with photovoltaic performance, optoelectronic and electrochemical results are discussed in relation to the I‐V characteristics of the devices. Additionally, a computer‐aided simulation is used to gain further insight into the effect of polymer structure on the energetic relationships in the bulk heterojunction devices.  相似文献   
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